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Samsung 3D V-NAND Structure Analysis Report

Samsung 3D V-NAND Structure Analysis Report

This is a structural analysis report of Samsung 3D V-NAND.

This report is a Memory Detailed Structural Analysis (MDSA) of the K9HQGY8S5M 3D V-NAND flash memory. The K9HQGY8S5M is the industry’s first implementation of a 32 cell vertical NAND memory and marks the departure from conventional planar flash memories. 【Features】 ○ Understand key design and manufacturing innovations ○ Make informed technical resource investment decisions ○ Find Evidence of Use For more details, please contact us or download the catalog. *This catalog is in English.

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Navitas GaN Power IC Structure Analysis Report

Navitas GaN Power IC Structure Analysis Report

Overview of the manufacturing process flow and clarification of the structure of GaN transistors, resistors, and capacitance.

We provide the "Navitas GaN Power IC (NV6117 & NV6115) Structural Analysis Report." The structures of the low-voltage transistors, resistive elements, capacitive elements, and GaN epitaxial layers of NV6117 and NV6115 are presumed to be similar, and we analyze them using different samples. [Report Contents] ■ Comparison of 600V GaN products (NAVITAS, GaN Systems, Panasonic) ■ Package observation, X-ray observation, chip observation ■ Chip planar observation ■ Cross-sectional SEM analysis of high-voltage/low-voltage GaN transistors, resistive elements, and capacitive elements ■ GaN epitaxial layer TEM-EDX material analysis *For more details, please download the PDF or feel free to contact us.

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Memory Structure Analysis Report "SK Hynix 16 nm"

Memory Structure Analysis Report "SK Hynix 16 nm"

Detailed Memory Structure Analysis Report of Flash Memory

This report is a detailed structural analysis of the SK Hynix H2JTDG8UD1BMS (16 GB, 16nm node MLC NAND flash memory) used in the Apple iPhone 6 Plus smartphone. The device is manufactured using a three-layer metal structure process (1st and 2nd metal layers: W, 3rd metal layer: Al), polysilicon control gates, and polysilicon floating gates. The memory array features a bit line pitch of 32nm and a word line pitch of 38nm. An air gap is employed to reduce crosstalk between adjacent cells. [Features] ○ Understanding of key design and manufacturing innovations ○ Informed technical resource investment decisions based on appropriate information For more details, please contact us or download the catalog.

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